Title :
Resonant-cavity InGaAs-InAlAs separate absorption, charge and multiplication avalanche photodiodes
Author :
Nie, H. ; Lenox, C. ; Kinsey, G. ; Yuan, P. ; Holmes, A.L., Jr. ; Streetman, B.G. ; Campbell, J.C.
Author_Institution :
Texas Univ., Austin, TX, USA
Abstract :
Summary form only given. High-speed avalanche photodiodes (APDs) are often used in optical communication systems due to their increased sensitivity as compared to conventional p-i-n photodetectors. The crucial performance parameters for this application are low multiplication noise and high gain-bandwidth. Recently, we have demonstrated low multiplication noise and record gain-bandwidth product (290 GHz) using an AlGaAs-GaAs-InGaAs resonant-cavity APD with separate absorption, charge and multiplication (SACM) regions. Those devices operated in the wavelength range near 0.9 μm. In this paper, we have extended this work to 1.55 μm using InAlAs-lnGaAs materials system
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; high-speed optical techniques; indium compounds; optical communication equipment; optical noise; 1.55 mum; AlGaAs-GaAs-InGaAs; AlGaAs-GaAs-InGaAs resonant-cavity APD; InAlAs-lnGaAs; InGaAs-InAlAs; high gain-bandwidth; high-speed avalanche photodiodes; low multiplication noise; optical communication systems; p-i-n photodetectors; record gain-bandwidth product; resonant-cavity InGaAs-InAlAs separate absorption charge and multiplication avalanche photodiodes; sensitivity; separate absorption charge and multiplication regions; Absorption; Avalanche photodiodes; Bandwidth; Indium compounds; Indium gallium arsenide; Indium phosphide; Mirrors; Noise measurement; Optical noise; Resonance;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737743
