Comparison of distance mismatch and pair matching of CMOS devices

Author

Schaper, U. ; Linnenbank, C.

Author_Institution

Dept. Corpotrate Logic, Infeneon Technol. AG, Munich, Germany

fYear

2003

fDate

16-18 Sept. 2003

Firstpage

703

Lastpage

705

Abstract

Distance matching and pair matching are compared for resistors and transistors of the 130nm technology. The device mismatch depending on the spatial distance between the devices is described using a statistical gradient parameter. This gradient parameter has to be taken into account for mixed signal circuit performance if short channel transistors or small width resistors are used. The gradient parameter is an increasing function of the critical device geometry parameter like the channel length.

Keywords

CMOS integrated circuits; integrated circuit layout; integrated circuit testing; mixed analogue-digital integrated circuits; nanotechnology; 130 nm; CMOS devices; channel length; device geometry parameter; distance mismatch; mixed signal circuit performance; pair matching; short channel transistors; small width resistors; spatial distance; statistical gradient parameter; Circuit testing; Current measurement; Electrical resistance measurement; Force measurement; Geometry; Resistors; Scattering; Semiconductor device measurement; Statistical analysis; Voltage measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 2003. ESSCIRC '03. Proceedings of the 29th European

Conference_Location

Estoril, Portugal

Print_ISBN

0-7803-7995-0

Type

conf

DOI

10.1109/ESSCIRC.2003.1257232

Filename

1257232