Title :
Magnetic tunnel junctions with improved TMR response and thermal stability
Author :
Urse, M. ; Chiriac, H. ; Grigoras, M. ; Borza, F.
Author_Institution :
Nat. Inst. of R&D for Tech. Phys., Iasi, Romania
Abstract :
Results concerning the influence of the composition and design of different MTJ structures on their TMR response and thermal stability are presented. The TMR response for Ta/Ni80Fe20/Fe45Mn55/FeCoBNiSi/Al2O3/FeCoBNiSi/Fe45Mn 55/Ta symmetric MTJ structure was changed with about 6 % in 20 G, leading to a sensitivity of about 0.3%/G. This structure exhibits a TCR value of about 60 ppm/degC.
Keywords :
alumina; antiferromagnetic materials; boron alloys; cobalt alloys; ferromagnetic materials; iron alloys; magnetic multilayers; manganese alloys; nickel alloys; silicon alloys; tantalum; thermal stability; tunnelling magnetoresistance; TCR; TMR; Ta-Ni80Fe20-Fe45Mn55-FeCoBNiSi-Al2O3-FeCoBNiSi-Fe45Mn55-Ta; antiferromagnetic materials; ferromagnetic materials; magnetic tunnel junctions; thermal coefficient resistance; thermal stability; tunnel magnetoresistance; Aluminum oxide; Iron alloys; Magnetic films; Magnetic properties; Magnetic sensors; Magnetic separation; Magnetic tunneling; Nickel alloys; Thermal stability; Tunneling magnetoresistance; Magnetoresistive properties; Multilayer thin films; Symmetric structure; Tunneling magnetic junctions;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336579
