Title :
Highly reliable tensile strained 810 nm QW laser diode operating at high temperatures
Author :
Pittroff, W. ; Bugge, F. ; Erbert, G. ; Knauer, A. ; Maege, J. ; Sebastian, J. ; Staske, R. ; Thies, A. ; Wenzel, H. ; Traenkle, G.
Author_Institution :
Ferdinand-Braun-Inst., Berlin, Germany
Abstract :
Lasers with tensely strained GaAsP SQW were grown by MOVPE. P-up mounted devices achieved a cw output of nearly 7 W at 15°C and >1.5 W at 85°C heat sink temperature (aperture 100 μm). Degradation rates of 1.2 10-5/h@1 W, 25°C have been obtained
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; heat sinks; laser reliability; quantum well lasers; semiconductor device reliability; semiconductor growth; vapour phase epitaxial growth; 1 W; 1.5 W; 100 mum; 15 C; 25 C; 7 W; 810 nm; 85 C; GaAsP; GaAsP SQW lasers; MOVPE; P-up mounted devices; QW laser diode; aperture; cw output; degradation rates; heat sink temperature; high temperatures; highly reliable lasers; tensile strained; Apertures; Current density; Epitaxial layers; Heat sinks; Optical resonators; Power generation; Solid lasers; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
DOI :
10.1109/LEOS.1998.737838
