Title :
Quasi-optical power-combining arrays
Author :
Rutledge, D.B. ; Popovic, Z.B. ; Weikle, R.M., II ; Kim, M. ; Potter, K.A. ; Compton, R.C. ; York, R.A.
Author_Institution :
Div. of Eng. & Appl. Sci., California Inst. of Technol., Pasadena, CA, USA
Abstract :
Semiconductor devices have limited power handling capabilities at high frequencies, particularly at millimeter-wave frequencies. A method is presented for overcoming this problem by combining the outputs of several devices quasi-optically in a resonator cavity. This method has been applied to a number of solid-state devices, including Gunn diodes and MESFETs. The devices do not require an external locking signal because they lock to a mode of the resonator cavity. Effective radiated powers of 22 W for a 4*4 array of Gunn diodes and 25 W for a 10*10 array of MESFETs have been achieved.<>
Keywords :
Gunn diodes; Schottky gate field effect transistors; cavity resonators; solid-state microwave devices; waveguide couplers; 22 W; 25 W; Gunn diodes; MESFETs; millimeter-wave frequencies; power handling capabilities; quasi-optical power-combining arrays; resonator cavity; Dielectric substrates; Electron tubes; Frequency conversion; Gunn devices; Laser tuning; MESFETs; Oscillators; Patch antennas; Semiconductor diodes; Solid state circuits;
Conference_Titel :
Microwave Symposium Digest, 1990., IEEE MTT-S International
Conference_Location :
Dallas, TX
DOI :
10.1109/MWSYM.1990.99794
