Title :
A fast three-dimensional MC simulator for tunneling diodes
Author :
Wagner, Mathias ; Mizuta, Hiroshi ; Nakazato, Kazuo
Author_Institution :
Hitachi Cambridge Lab., Hitachi Europe Ltd., Cambridge, UK
Abstract :
A fast simulator is presented for 3D vertical tunneling devices with lateral confinement and gates. The tunneling current across each barrier is calculated using a combination of 3D ray tracing, Monte Carlo ensemble averaging, and a multi-grid Poisson solver, until self-consistency of the current is achieved
Keywords :
Monte Carlo methods; Poisson equation; electric current; ray tracing; semiconductor device models; tunnel diodes; 3D MC simulator; 3D ray tracing; 3D vertical tunneling devices; Monte Carlo ensemble averaging; barrier tunneling current; current self-consistency; lateral confinement; lateral gates; multi-grid Poisson solver; tunneling diodes; Current measurement; Diodes; Electrostatic measurements; Intrusion detection; Position measurement; Probability; Sampling methods; Temperature; Threshold voltage; Tunneling;
Conference_Titel :
Simulation of Semiconductor Processes and Devices, 2000. SISPAD 2000. 2000 International Conference on
Conference_Location :
Seattle, WA
Print_ISBN :
0-7803-6279-9
DOI :
10.1109/SISPAD.2000.871199
