Title :
A study of polarization effects in Metal-Ferroelectric-Oxide-Semiconductor Capacitors
Author :
Rusu, Alexandru ; Salvatore, Giovanni ; Ionescu, Adrian M.
Author_Institution :
Nanolab, Ecole Polytechnqiue Fed. de Lausanne, Lausanne, Switzerland
Abstract :
In this paper we report the fabrication and detailed electrical characterization of a metal-ferroelectric-oxide-semiconductor capacitor aiming at the extraction of the polarization characteristic. In order to evaluate the electrical performances of the ferroelectric over SiO2 capacitor, we propose a simple device test structure featuring an intermediate contact between the two insulators. The investigated test structures are fabricated on highly doped silicon with a gate stack including 40 nm silicon dioxide, 100 nm Pt intermediate contact, 160 nm P(VDF-TrFE) and Au as a top contact. Based on voltage measurements and using an analytical model, we subsequently extract the polarization curves without the need of capacitive measurements. The proposed test structure can serve the future experimental investigation of the possible negative capacitances in complex ferroelectric gate stacks.
Keywords :
MFIS structures; dielectric polarisation; elemental semiconductors; ferroelectric capacitors; gold; platinum; polymers; silicon; silicon compounds; voltage measurement; P(VDF-TrFE); Si-SiO2-Pt-Au; analytical model; capacitor fabrication; complex ferroelectric gate stacks; electrical characterization; gold contact; high-doped silicon; metal-ferroelectric-oxide-semiconductor capacitors; negative capacitances; polarization effects; silicon dioxide; size 100 nm; size 160 nm; size 40 nm; voltage measurement; Capacitors; Contacts; Dielectrics and electrical insulation; Fabrication; Ferroelectric materials; Gold; Insulator testing; Performance evaluation; Polarization; Silicon compounds; Fe-Fet; Fe-cap; Ferroelectric; PVDF; capacitor;
Conference_Titel :
Semiconductor Conference, 2009. CAS 2009. International
Conference_Location :
Sinaia
Print_ISBN :
978-1-4244-4413-7
DOI :
10.1109/SMICND.2009.5336660