Design optimization of RF MEMS SP4T and SP6T switch

Author

Roy, Sangita C. ; Rangra, Kamal J.

Author_Institution

Central Electron. Eng. Res. Inst. (CSIR), Pilani, India

Volume

2

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

443

Lastpage

446

Abstract

In this paper, improved RF MEMS SP4T and SP6T switches using a new design and layout topology, having significant impact on the RF characteristics of the device are presented. The device takes advantage of the CPW transmission line with small width and spacing configured for 50 Omega line impedance in ohmic contact SPST switch. The results show significant improvement in insertion loss and isolation without any significant changes in other electromechanical and RF parameters. A systematic comparison of different configurations of CPW designs and SPST switch is performed. The simulated insertion loss and isolation are better than -0.238 dB and -53.002 dB obtained for SP4T and -0.2956 dB and -57.217 dB for SP6T switch at 8 GHz respectively.

Keywords

coplanar waveguides; microswitches; CPW transmission line; RF MEMS SP4T; SP6T switch; frequency 8 GHz; insertion loss; Coplanar waveguides; Design optimization; Impedance; Insertion loss; Ohmic contacts; Radio frequency; Radiofrequency microelectromechanical systems; Switches; Topology; Transmission lines; Insertion Loss; Isolation; RF MEMS; SP4T; SP6T;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336681

Filename

5336681