A swing-enhanced current-reuse class-C VCO with dynamic bias control circuits

Author

Siriburanon, Teerachot ; Wei Deng ; Okada, Kenichi ; Matsuzawa, Akira

Author_Institution

Dept. Phys. Electron., Tokyo Inst. of Technol., Tokyo, Japan

fYear

2014

fDate

20-23 Jan. 2014

Firstpage

25

Lastpage

26

Abstract

A swing-enhanced current-reuse class-C VCO which can theoretically achieve same phase noise figure-of-merit (FoM) as other class-C VCOs at the lowest power consumption is presented. A swing enhancement in class-C operation and an oscillation robustness are achieved through dynamic bias control circuits for both NMOS and PMOS transistors. The proposed VCO has been fabricated in 180nm CMOS process while oscillating at 4.6 GHz. The measured phase noise is -119 dBc/Hz at 1 MHz offset while consuming 1.6 mA from 1.5 V supply. An FoM of -189 dBc/Hz is achieved.

Keywords

CMOS analogue integrated circuits; MMIC oscillators; MOSFET; field effect MMIC; voltage-controlled oscillators; CMOS process; FoM; NMOS transistors; PMOS transistors; current 1.6 mA; dynamic bias control circuits; frequency 4.6 GHz; oscillation robustness; phase noise figure-of-merit; power consumption; size 180 nm; swing-enhanced current-reuse class-C VCO; voltage 1.5 V; CMOS integrated circuits; Logic gates; MOS devices; Phase noise; Steady-state; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Design Automation Conference (ASP-DAC), 2014 19th Asia and South Pacific

Conference_Location

Singapore

Type

conf

DOI

10.1109/ASPDAC.2014.6742856

Filename

6742856