Title :
Zn diffusion-induced disordering in semi-insulating, p-doped, and n-doped GaAs/AlGaAs multilayered structures: a comparative study
Author_Institution :
Inst. of Appl. Opt., Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fDate :
29 Apr-3 May 1996
Abstract :
Secondary-ion mass spectrometry and photoluminescence measurements are used to study Zn diffusion into undoped, Be-doped and Si-doped identical GaAs/Al0.2Ga0.8As multilayered structures. The effective Zn diffusivity and the disordering rate in the undoped sample are larger than those in the Si-doped sample containing a high concentration of column-III vacancy (VIII), while they are smaller than those in the Be-doped sample that may contain column-III interstitials (IIII) A reduction of VIII concentration in the Si-doped sample and an increase of IIII concentration in the Be-doped sample are observed after Zn diffusion, Our model proposed on the basis of the “kick-out” mechanism explains well the experimental results
Keywords :
III-V semiconductors; aluminium compounds; beryllium; diffusion; gallium arsenide; photoluminescence; secondary ion mass spectra; semiconductor doping; silicon; zinc; GaAs-Al0.2Ga0.8As:Zn,Be,Si; GaAs/Al0.2Ga0.8As:Zn,Be(Si); GaAs/AlGaAs multilayered structures; Zn diffusion-induced disordering; disordering rate; effective Zn diffusivity; photoluminescence; secondary-ion mass spectrometry; Doping; Gallium arsenide; Mass spectroscopy; Optical refraction; Optical variables control; Optoelectronic devices; Photoluminescence; Quantum well devices; Refractive index; Zinc;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570877
