Dielectric relaxation in As10Se90 amorphous film near the glass transition temperature

Author

Iovu, M.S. ; Vasiliev, I.A. ; Shpotyuk, O.I.

Author_Institution

Inst. of Appl. Phys., Acad. of Sci. of Moldova, Chisinau, Moldova

Volume

2

fYear

2009

fDate

12-14 Oct. 2009

Firstpage

371

Lastpage

374

Abstract

The quasi-static capacitance of As₁₀Se₉₀ amorphous film was studied in cycles of heating and cooling near the glass transition temperature T_g=343 K. Features in the capacitance behavior such as the non-exponential relaxation and non-Arrhenius form of time relaxations in dependence on temperature are revealed. It was accepted, that the capacitance measurements allow finding the glass transition in thin amorphous film of As₁₀Se₉₀ which is accompanied by freezing of some charged molecular dipoles.

Keywords

amorphous semiconductors; arsenic compounds; dielectric relaxation; freezing; glass transition; semiconductor thin films; As₁₀Se₉₀; amorphous semiconductors; charged molecular dipoles; cooling; dielectric relaxation; freezing; glass transitions; glassy materials; heating; nonArrhenius form; quasistatic capacitance; thin amorphous film; Aging; Amorphous materials; Capacitance measurement; Cooling; Dielectric substrates; Glass; Heating; Pulse amplifiers; Pulse measurements; Temperature dependence; Chalcogenide films; Dielectric relaxation; Glass transition;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2009. CAS 2009. International

Conference_Location

Sinaia

ISSN

1545-827X

Print_ISBN

978-1-4244-4413-7

Type

conf

DOI

10.1109/SMICND.2009.5336702

Filename

5336702