Title :
InAs channel HFETs: current status and future trends
Author_Institution :
Dept. of Phys., Simon Fraser Univ., Burnaby, BC, Canada
fDate :
29 Sep-2 Oct 1998
Abstract :
We review the development of InAs/AlSb HFETs, and discuss some of the outstanding problems along with their potential solutions. InAs/AlSb HFETs offer good microwave performance at very low biases, and they are therefore of interest for low-power wireless applications as well as ultrahigh frequency transistors: preliminary measurements suggest a 1 THz bandwidth may be achieved
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; low-power electronics; microwave field effect transistors; 1 THz; III-V semiconductors; InAs-AlSb; bias; channel HFETs; low-power wireless applications; microwave performance; ultrahigh frequency transistors; Cutoff frequency; Gallium arsenide; HEMTs; Indium phosphide; Laboratories; Lattices; MODFETs; Microwave transistors; Physics; Semiconductor devices;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738036
