Title :
SIMMWIC: the impact of SiGe
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
fDate :
29 Sep-2 Oct 1998
Abstract :
This paper discusses the performance of Silicon Millimeter Wave Integrated Circuits and possible improvements by SiGe heterostructure device concepts. It is shown, that Schottky and transit time diodes in homojunction silicon already exhibit a good performance. An improvement by SiGe is not yet proven for these devices. Silicon based transistors for 20 to 40 GHz operation frequencies require heterojunction concepts (SiGe HBT) as well as novel concepts for even faster devices
Keywords :
Ge-Si alloys; MIMIC; elemental semiconductors; semiconductor materials; silicon; 20 to 40 GHz; SIMMWIC; Schottky diode; Si; SiGe; SiGe HBT; SiGe heterostructure device; silicon homojunction device; silicon millimeter wave integrated circuit; silicon transistor; transit time diode; Attenuation; Germanium silicon alloys; Microstrip; Millimeter wave devices; Millimeter wave technology; Millimeter wave transistors; Schottky diodes; Semiconductor diodes; Silicon germanium; Substrates;
Conference_Titel :
Signals, Systems, and Electronics, 1998. ISSSE 98. 1998 URSI International Symposium on
Conference_Location :
Pisa
Print_ISBN :
0-7803-4900-8
DOI :
10.1109/ISSSE.1998.738043
