Title :
Properties of very thin adenine layer with high inhibition for 32nm node Cu/Low-K interconnection
Author :
Hara, M. ; Aoki, H. ; Masuzumi, T. ; Watanabe, D. ; Kimura, C. ; Sugino, T.
Author_Institution :
Dept. of Electr., Electron. & Inf. Eng., Osaka Univ., Suita, Japan
Abstract :
An effective inhibition with very thin layer is required for Cu/Low-K interconnection of next generation devices. We have achieved an effective suppression of Cu oxidation using adenine as an environmentally friendly material. By using electrochemical measurements, we find that the adenine layer can inhibit Cu oxidation by forming the very thin layer compared with Benzotriazol (BTA) as a conventional Cu inhibitor.
Keywords :
copper; corrosion inhibitors; electrochemistry; integrated circuit interconnections; low-k dielectric thin films; nanotechnology; Cu; Cu oxidation; Cu-low-K interconnection; adenine layer; electrochemical measurements; inhibition; size 32 nm; Biodegradable materials; Biodegradation; Chemicals; Corrosion inhibitors; Dielectric constant; Electrodes; Impedance measurement; Integrated circuit interconnections; Oxidation; Surface treatment;
Conference_Titel :
VLSI Technology, Systems, and Applications, 2009. VLSI-TSA '09. International Symposium on
Conference_Location :
Hsinchu
Print_ISBN :
978-1-4244-2784-0
Electronic_ISBN :
1524-766X
DOI :
10.1109/VTSA.2009.5159269
