DocumentCode :
2454849
Title :
A novel concept for first-pass design of RF Power amplifiers for wireless communications
Author :
Ma, Rui ; Kompa, Günter ; Bangert, Aexl
Author_Institution :
CTO Res., Nokia Siemens Networks, Beijing, China
fYear :
2011
fDate :
25-28 Sept. 2011
Firstpage :
13
Lastpage :
16
Abstract :
In this paper, a novel RF circuit design concept, namely, Partitioning Design Approach (PDA) is proposed. In comparison with the conventional RF circuit design approach, it is aimed to accomplish the complex RF circuit design tasks in a straightforward way. As a demonstrator, one class-AB RF power amplifier (PA) was designed at the centre frequency of 2.14 GHz using AlGaAs/GaAs HEMT technology. Finally, excellent agreement between the real measured RF performance and the expected simulation results has been achieved without iterative and tedious post-fabrication tuning work; the feasibility of the PDA for obtaining first-pass success in RF PA realization has been demonstrated successfully.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; field effect MMIC; gallium arsenide; power amplifiers; AlGaAs-GaAs; HEMT technology; RF circuit design; class-AB RF power amplifier; first-pass design; frequency 2.14 GHz; partitioning design approach; post-fabrication tuning work; wireless communications; Integrated circuit interconnections; Integrated circuit reliability; Power amplifiers; Power measurement; Radio frequency; Scattering parameters; First-pass success design; Partitioning Design Approach; RF Power Amplifier;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Wireless Technology and Applications (ISWTA), 2011 IEEE Symposium on
Conference_Location :
Langkawi
Print_ISBN :
978-1-4577-1496-2
Type :
conf
DOI :
10.1109/ISWTA.2011.6089542
Filename :
6089542
Link To Document :
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