Title :
Monolithically Integrated 4-Channel-Selectable Light Sources Fabricated by the SAG Technology
Author :
Can Zhang ; Hongliang Zhu ; Song Liang ; Liangshun Han ; Wei Wang
Author_Institution :
Key Lab. of Semicond. Mater. Sci., Inst. of Semicond., Beijing, China
Abstract :
The monolithic integration of four 1.5-μm InGaAsP/InP distributed feedback (DFB) lasers with a 4 × 1 multimode-interference (MMI) optical combiner using the selective area growth and butt-joint regrowth technologies is proposed and demonstrated. A dry-etching stop layer is grown to guarantee the etching depth of MMI. The four channels could match the ITU wavelength grid of 200-GHz well with a simple integrated thin-film heater, covering the wavelength range of 1552.3-1556.3 nm. The average output power of LD is 2.8 mW with a 150-mA current, and the threshold current is 20-22 mA at 25°C. The four channels can operate separately or simultaneously.
Keywords :
III-V semiconductors; distributed feedback lasers; etching; gallium arsenide; heating elements; indium compounds; integrated optoelectronics; light interference; monolithic integrated circuits; semiconductor lasers; thin film devices; DFB lasers; ITU wavelength grid; InGaAsP-InP; MMI optical combiner; SAG technology; average output power; butt-joint regrowth; current 150 mA; current 20 mA to 22 mA; distributed feedback lasers; dry-etching stop layer; etching depth; frequency 200 GHz; monolithically integrated 4-channel-selectable light sources; multimode-interference optical combiner; power 2.8 mW; selective area growth; temperature 25 degC; thin-film heater; threshold current; wavelength 1.5 mum; wavelength 1552.3 nm to 1556.3 nm; Arrayed waveguide gratings; Distributed feedback devices; Laser feedback; Light sources; Optical device fabrication; Waveguide lasers; Laser array; multiwavelength light sources; thin-film heater;
Journal_Title :
Photonics Journal, IEEE
DOI :
10.1109/JPHOT.2013.2271733
