Title :
Electrothermal characterization of IGBT
Author :
Raël, S. ; Schaeffer, Ch ; Perret, R.
Author_Institution :
Lab. d´´Electrotech., CNRS, Grenoble, France
Abstract :
The improvement of the switch function, due to technological evolution, is still limited by the intrinsic characteristics of silicon. It is therefore crucial, for the design of power convertors, to develop an understanding of electrical and thermal behaviours of power components, in order to estimate their actual performances and to be able to choose a device among several. This experimental and theoretical investigation on IGBTs aims to a better power convertors achievement
Keywords :
insulated gate bipolar transistors; power convertors; power semiconductor switches; semiconductor device models; thermal analysis; IGBT; choppers; dynamic parameters; electrical behaviour; electrothermal characterization; power components; power convertors; switch function; thermal behaviour; thermal resistance; thermal transfer characterisation; Books; Circuits; Converters; Electrothermal effects; Insulated gate bipolar transistors; MOSFETs; Power electronics; Silicon; Switches; Threshold voltage;
Conference_Titel :
Industry Applications Society Annual Meeting, 1994., Conference Record of the 1994 IEEE
Conference_Location :
Denver, CO
Print_ISBN :
0-7803-1993-1
DOI :
10.1109/IAS.1994.377582
