Title :
A new monolithic emitter-switching bipolar transistor (ESBT) in high-voltage converter applications
Author :
Buonomo, S. ; Ronsisvalle, C. ; Scollo, R. ; Musumeci, S. ; Pagano, R. ; Raciti, A.
Author_Institution :
STMicroelectronics, Catania, Italy
Abstract :
In this paper a new family of devices, which is based on a bipolar-MOSFET cascode connection, is presented. The monolithic device is suitable for high-voltage applications. The basic features of this power device, the emitter-switching bipolar transistor (ESBT) component, are described both in terms of physical structure and electrical performances. The field of applications along with the driver requirement is discussed too. The advantages and drawbacks of the presented device in terms of both switching losses and base-gate command circuitry are compared with those of a MOSFET. Finally, the new device is tested by using as a workbench an actual off-line power supply (forward converter), in order to carry out useful information for the power converter designer about the switching behavior and the power losses.
Keywords :
bipolar transistor switches; driver circuits; losses; power MOSFET; power bipolar transistors; power convertors; power semiconductor switches; semiconductor device testing; base-gate command circuitry; bipolar-MOSFET cascode connection; driver requirement; electrical performance; forward converter; high-voltage; high-voltage converter; monolithic emitter-switching bipolar transistor; off-line power supply; physical structure; power losses; switching behavior; switching losses; Bipolar transistors; Circuit testing; Driver circuits; Low voltage; MOSFET circuits; Power MOSFET; Power supplies; Switching circuits; Switching converters; Switching loss;
Conference_Titel :
Industry Applications Conference, 2003. 38th IAS Annual Meeting. Conference Record of the
Print_ISBN :
0-7803-7883-0
DOI :
10.1109/IAS.2003.1257800
