Title :
Nanoscale mapping of dopant distributions in InP current blocking layers
Author :
Hull, Robert ; Moore, Mary V. ; Walker, John F.
Author_Institution :
Dept. of Mater. Sci., Virginia Univ., Charlottesville, VA, USA
fDate :
29 Apr-3 May 1996
Abstract :
A novel application of combined electron and ion beam techniques for the study of dopant distributions in InP-based structures is described. It is demonstrated that dopant distributions in InP may be mapped from transmission electron microscope images with spatial resolution ~10 nm and compositional sensitivity ~1017 cm-3. Applications to current blocking layers in InP laser diode structures are illustrated. Pertinent experimental observations relating to the origin of this unexpected dopant contrast are discussed
Keywords :
III-V semiconductors; doping profiles; focused ion beam technology; indium compounds; internal stresses; semiconductor doping; semiconductor lasers; sputtering; transmission electron microscopy; InP; InP current blocking layers; InP laser diode structures; TEM images; compositional sensitivity; dopant contrast; dopant distributions; electron beam techniques; ion beam techniques; nanoscale mapping; Biomembranes; Electron beams; Electron emission; Focusing; Indium phosphide; Ion beams; Laser beams; Spatial resolution; Spectroscopy; Transmission electron microscopy;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570923
