Title :
Local mode spectroscopy of oxygen-implanted GaAs MBE layers
Author :
Alt, H.Ch. ; Müssig, H. ; Brugger, H.
Author_Institution :
Fachbereich Mikrotech./Phys. Tech., Fachhochschule Munchen, Germany
fDate :
29 Apr-3 May 1996
Abstract :
Defects introduced by oxygen implantation in silicon-doped GaAs layers grown by molecular beam epitaxy (MBE) have been investigated by Fourier transform infrared absorption spectroscopy at low temperatures. After rapid thermal annealing in the temperature range between 630 and 880°C a local mode is observed at 641 cm-1. The line shows a shift with both the Si and O isotope (28Si/29 Si and 16O/18O, respectively) mass. Experimental evidence is presented that the silicon-oxygen defect giving rise to this line is responsible for the high-resistive behaviour of the MBE layer
Keywords :
Fourier transform spectra; III-V semiconductors; defect absorption spectra; gallium arsenide; infrared spectra; ion implantation; oxygen; rapid thermal annealing; semiconductor epitaxial layers; silicon; 630 to 880 C; Fourier transform infrared absorption spectroscopy; GaAs:Si,O; MBE layers; Si-O defect; ion implantation; line shift; local mode spectroscopy; molecular beam epitaxy; rapid thermal annealing; Annealing; Electromagnetic wave absorption; Fourier transforms; Gallium arsenide; Implants; Infrared spectra; Isotopes; Molecular beam epitaxial growth; Spectroscopy; Temperature;
Conference_Titel :
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location :
Toulouse
Print_ISBN :
0-7803-3179-6
DOI :
10.1109/SIM.1996.570929
