Transmission electron microscopy of Al-rich III-V oxides

Author

Liliental-Weber, Z. ; Li, M. ; Li, G.S. ; Chang-Hasnain, C. ; Weber, E.R.

Author_Institution

Div. of Mater. Sci., Lawrence Berkeley Lab., CA, USA

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

159

Lastpage

162

Abstract

Transmission electron microscopy was used for the characterization of microstructure of wet oxidation of AlAs. Dense cubic γ-Al₂O₃ was formed with a substantial shrinking after oxidation. Addition of a small amount of Ga (x=0.1) increased granularity of the oxide. Large pores were formed at the interface between the oxide and the low Al content layer. Arsenic accumulation near these pores, the interface, as well at the layer surface was found after oxidation. This study showed that properties of this oxide might be enhanced by the properties of GaAs rich in As (similar to low-temperature-grown-GaAs)

Keywords

III-V semiconductors; aluminium compounds; crystal microstructure; granular materials; oxidation; semiconductor-insulator boundaries; transmission electron microscopy; γ-Al₂O₃; AlAs; AlAs-Al₂O₃; accumulation; granularity; interface pores; microstructure; shrinking; transmission electron microscopy; wet oxidation; Gallium arsenide; III-V semiconductor materials; Laboratories; Materials science and technology; Microstructure; Oxidation; Temperature; Thermal degradation; Transmission electron microscopy; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570930

Filename

570930