• DocumentCode
    2463744
  • Title

    Investigation of the resistive switching behavior in Ni/HfO2-based RRAM devices

  • Author

    Gonzalez, M.B. ; Acero, M.C. ; Beldarrain, O. ; Zabala, M. ; Campabadal, F.

  • Author_Institution
    IMB-CNM (CSIC), Inst. de Microelectron. de Barcelona, Bellaterra, Spain
  • fYear
    2015
  • fDate
    11-13 Feb. 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    In this work, a systematic study of the electrical properties and the cycle-to-cycle variability in Ni/HfO2-based RRAM devices is presented. Besides the resistive switching behavior, attention is also given to the impact of temperature on device stability and variability.
  • Keywords
    electric properties; hafnium compounds; nickel; resistive RAM; Ni-HfO2; RRAM devices; cycle-to-cycle variability; device stability; electrical properties; resistive switching behavior; Electron devices; Hafnium compounds; Nickel; Stability analysis; Switches; Temperature; Temperature measurement; ALD; HfO2; Ni; RRAM; variability;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2015 10th Spanish Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/CDE.2015.7087499
  • Filename
    7087499
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2463744