DocumentCode
2463764
Title
NH3 Plasma Treatment for Flash Memory on Poly-Si Thin Films
Author
Lin, Yu-Hsien ; You, Hsin-Chiang ; Chou, Jay-Chi ; Chou, Tung-Huan ; Chao, Tien-Sheng
Author_Institution
Dept. of Electron. Eng., Nat. United Univ., Miaoli, Taiwan
fYear
2012
fDate
4-6 June 2012
Firstpage
825
Lastpage
828
Abstract
In this paper, we fabricated the poly-Si-oxide-nitride-oxide-silicon (SONOS)-type Flash memories on polycrystalline-silicon thin films. Employing a powerful defect passivation technique, i.e., NH3 plasma treatment, the charge storage capability was clearly observed to be remarkably improved including charge storage, drain disturbance, and gate disturbance.
Keywords
flash memories; semiconductor thin films; NH3; SONOS-type flash memories; charge storage capability; defect passivation; drain disturbance; gate disturbance; plasma treatment; poly-Si thin films; poly-Si-oxide-nitride-oxide-silicon; polycrystalline-silicon thin films; Charge carrier processes; Educational institutions; Flash memory; Hafnium compounds; Plasmas; Thin film transistors; Tunneling; Flash memories; NH3 Plasma; Polycrystalline-silicon thin-film transistor (poly-Si-TFT); poly-Si–oxide–nitride–oxide–silicon (SONOS)-type memories;
fLanguage
English
Publisher
ieee
Conference_Titel
Computer, Consumer and Control (IS3C), 2012 International Symposium on
Conference_Location
Taichung
Print_ISBN
978-1-4673-0767-3
Type
conf
DOI
10.1109/IS3C.2012.212
Filename
6228435
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