Title :
Radiation effects in nanometric SRAMs induced by 18 MeV protons
Author :
Malagon Perianez, Daniel ; Merino, J.L. ; Torrens, G. ; Segura, J. ; Bota, S.A. ; Jimenez-Ramos, M.C. ; Garcia Lopez, J.
Author_Institution :
Dept. de Fis., Univ. de les Illes Balears, Palma de Mallorca, Spain
Abstract :
This paper presents experimental results of Soft errors produced by proton interaction in SRAM memories implemented with a 65 nm CMOS technology using the 18 MeV proton facility at the National Center of Accelerators (CNA) in Seville.
Keywords :
SRAM chips; logic design; nanoelectronics; protons; radiation hardening (electronics); CMOS; National Center of Accelerators; SRAM memories; Seville; electron volt energy 18 MeV; nanometric SRAM; proton interaction; protons; radiation effects; size 65 nm; soft errors; CMOS integrated circuits; CMOS technology; Protons; Radiation effects; Random access memory; Semiconductor device measurement; Single event upsets; SRAM; Single Event Effects; Single Event Upset; Soft errors; protons; radiation effects;
Conference_Titel :
Electron Devices (CDE), 2015 10th Spanish Conference on
Conference_Location :
Madrid
DOI :
10.1109/CDE.2015.7087506
