• DocumentCode
    2463897
  • Title

    Radiation effects in nanometric SRAMs induced by 18 MeV protons

  • Author

    Malagon Perianez, Daniel ; Merino, J.L. ; Torrens, G. ; Segura, J. ; Bota, S.A. ; Jimenez-Ramos, M.C. ; Garcia Lopez, J.

  • Author_Institution
    Dept. de Fis., Univ. de les Illes Balears, Palma de Mallorca, Spain
  • fYear
    2015
  • fDate
    11-13 Feb. 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper presents experimental results of Soft errors produced by proton interaction in SRAM memories implemented with a 65 nm CMOS technology using the 18 MeV proton facility at the National Center of Accelerators (CNA) in Seville.
  • Keywords
    SRAM chips; logic design; nanoelectronics; protons; radiation hardening (electronics); CMOS; National Center of Accelerators; SRAM memories; Seville; electron volt energy 18 MeV; nanometric SRAM; proton interaction; protons; radiation effects; size 65 nm; soft errors; CMOS integrated circuits; CMOS technology; Protons; Radiation effects; Random access memory; Semiconductor device measurement; Single event upsets; SRAM; Single Event Effects; Single Event Upset; Soft errors; protons; radiation effects;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices (CDE), 2015 10th Spanish Conference on
  • Conference_Location
    Madrid
  • Type

    conf

  • DOI
    10.1109/CDE.2015.7087506
  • Filename
    7087506
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2463897