Atomic force microscopy and Raman scattering study of GaAs/InAs(111) A and B MOVPE heterostructures

Author

Groenen, J. ; Attolini, G. ; Chimenti, E. ; Pelosi, C. ; Lottici, P.P. ; Carles, R.

Author_Institution

Lab. de Phys. des Solides, Univ. Paul Sabatier, Toulouse, France

fYear

1996

fDate

29 Apr-3 May 1996

Firstpage

181

Lastpage

184

Abstract

Surface morphology of GaAs/InAs [111] A and B heterostructures grown by metal organic vapour phase epitaxy have been investigated by atomic force microscopy. The large lattice mismatch induces the formation of pyramidal islands: their geometry greatly depends on the surface polarity and evolves with the growth time. The strain relaxation which accompanies the various growth mechanisms has been analyzed by Raman scattering. Valuable informations have been tracted from spatially-resolved measurements, resonance and symmetry-loss effects

Keywords

III-V semiconductors; Raman spectra; atomic force microscopy; gallium arsenide; indium compounds; interface structure; semiconductor growth; semiconductor heterojunctions; surface topography; vapour phase epitaxial growth; GaAs-InAs; GaAs/InAs(111); Raman scattering; atomic force microscopy; geometry; growth time; large lattice mismatch; metal organic vapour phase epitaxy; pyramidal islands; strain relaxation; surface morphology; symmetry-loss effects; Atomic force microscopy; Atomic layer deposition; Atomic measurements; Capacitive sensors; Epitaxial growth; Gallium arsenide; Geometry; Lattices; Raman scattering; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE

Conference_Location

Toulouse

Print_ISBN

0-7803-3179-6

Type

conf

DOI

10.1109/SIM.1996.570935

Filename

570935