DocumentCode :
2464918
Title :
Nondestructive TAV Spectroscopy to Detect Impurity Levels in Semiconductor by Scanning the Energy Gap with Biasing Electric Field
Author :
Tabib-Azar, M. ; Das, P.
fYear :
1985
fDate :
16-18 Oct. 1985
Firstpage :
1016
Lastpage :
1021
Keywords :
Conductivity; Electron traps; Interface states; Monitoring; Optical surface waves; Semiconductor device testing; Semiconductor impurities; Spectroscopy; Surface acoustic waves; Surface waves;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
IEEE 1985 Ultrasonics Symposium
Conference_Location :
San Francisco, CA, USA
Type :
conf
DOI :
10.1109/ULTSYM.1985.198668
Filename :
1535608
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2464918
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