DocumentCode
2465693
Title
Heteroepitaxy of Ge-Si1-xGex superlattices on Si (100) substrates by GeH4-Si MBE
Author
Orlov, L.K. ; Tolomasov, V.A. ; Potapov, A.V. ; Drozdov, Yu N. ; Vdovin, V.I.
Author_Institution
Inst. for Phys. of Microstructures, Acad. of Sci., Nizhny Novgorod, Russia
fYear
1996
fDate
29 Apr-3 May 1996
Firstpage
215
Lastpage
218
Abstract
We applied GeH4-Si MBE for growing Ge-Si1-xGex superlattices on Si(100). We investigated the distribution and the structure of defects inside heteroepitaxial Si1-xGex layers grown on Si(100). It was shown that the system has unique peculiarities of a dislocation structure formation. We found out that the plastic deformation on a layer-substrate heteroboundary eliminates strong elastic deformation inside the grown layer
Keywords
Ge-Si alloys; dislocation structure; elemental semiconductors; germanium; molecular beam epitaxial growth; plastic deformation; semiconductor epitaxial layers; semiconductor growth; semiconductor materials; Ge-SiGe; GeH4-Si MBE; Si; Si(100) substrates; defect distribution; defect structure; dislocation structure; heteroepitaxial layers; plastic deformation; superlattices; Atomic layer deposition; Crystallization; Epitaxial growth; Metallic superlattices; Molecular beam epitaxial growth; Quantum well devices; Semiconductor process modeling; Solids; Substrates; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Semi-Insulating Materials Conference, 1996. IEEE
Conference_Location
Toulouse
Print_ISBN
0-7803-3179-6
Type
conf
DOI
10.1109/SIM.1996.570942
Filename
570942
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