DocumentCode
2465747
Title
The simulation and measurement of the temperature rise in a power semiconductor device under transient conditions
Author
Thomas, K.P. ; Webb, P.W.
Author_Institution
Smiths Ind. Aerosp. Ltd., Birmingham, UK
fYear
1997
fDate
35459
Firstpage
42491
Lastpage
42496
Abstract
This paper first examines the method widely used by semiconductor manufacturers to generate the transient thermal response curves. It then goes on to examine the validity of such curves by means of measuring the die temperature rise under pulsed power conditions using an infrared camera and by generating a comprehensive thermal model of the semiconductor device and package. The results are finally presented and conclusions are made
Keywords
power semiconductor devices; die temperature rise; infrared camera; measurement; package; pulsed power semiconductor device; simulation; thermal model; transient thermal response curve;
fLanguage
English
Publisher
iet
Conference_Titel
Modelling and Simulation for Thermal Management (Digest No. 1997/043), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19970270
Filename
668300
Link To Document