Title :
High thermal stability AlGaAs/InGaAs enhancement-mode pHEMT Using Pd buried-gate technology
Author :
Yang, Chih-Wei ; Lin, Che-Kai ; Lin, Da-Wei ; Chiu, Hsien-Chin
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan
Abstract :
In this work, two enhancement-mode (E-mode) GaAs-based high electron mobility transistors (HEMTs), grown by molecular beam epitaxy (MBE) system, have been fabricated and investigated. We evaporated traditional platinum (Pt) and palladium (Pd) as Schottky contact metals to observe high-temperature performance. Following the 1 mum Pt/Ti/Au gate and Pd/Ti/Au gate metals deposition, the devices were thermally annealed at 200degC. Two devices DC and RF performance from 0degC to 100degC were measured. Because the platinum skins into Schottky Layer, the DC and RF characteristics were affected. Experimentally, the palladium gate device showed better DC, RF, and high-temperature characteristics. These advantages suggest that the palladium device is suitable for high-speed and high-power integrated circuit applications.
Keywords :
Schottky barriers; aluminium compounds; gallium arsenide; gold; high electron mobility transistors; indium compounds; palladium; platinum; titanium; AlGaAs-InGaAs; Pd-Ti-Au; Pt-Ti-Au; Schottky contact; high electron mobility transistors; high-temperature characteristics; molecular beam epitaxy; pHEMT; temperature 0 degC to 100 degC; temperature 200 degC; thermal stability; Gold; HEMTs; Indium gallium arsenide; MODFETs; Molecular beam epitaxial growth; PHEMTs; Palladium; Platinum; Radio frequency; Thermal stability;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760645
