Title :
Modeling of avalanche gain for high-speed InP/InGaAs avalanche photodiodes
Author :
Park, J.K. ; Yun, I.
Author_Institution :
Dept. of Electr. & Electron. Eng., Yonsei Univ., Yonsei
Abstract :
InP/InGaAs avalanche photodiodes (APDs) have been widely used for high-speed optical receivers because of their advantages of high avalanche gain and high sensitivity. Generally, avalanche photodiodes are operated at near the breakdown voltage to improve gain characteristic. However, process variations of APD can cause the fluctuations of characteristics, such as avalanche gain, breakdown voltage, and dark current, which degrade proper operating characteristics of APDs. In this paper, the characteristic variations of InP/InGaAs avalanche photodiodes are investigated using commercial TCAD tool.
Keywords :
III-V semiconductors; amplification; avalanche photodiodes; dark conductivity; gallium arsenide; indium compounds; semiconductor device breakdown; semiconductor device models; technology CAD (electronics); InP-InGaAs; TCAD; avalanche gain; breakdown voltage; dark current; high-speed avalanche photodiodes; high-speed optical receivers; Absorption; Avalanche photodiodes; Degradation; Doping; Fluctuations; Indium gallium arsenide; Indium phosphide; Optical receivers; Semiconductor process modeling; Testing; avalanche gain; avalanche photodiodes; process variation;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760679
