DocumentCode
24666
Title
A Self-Scanned Active-Matrix Tactile Sensor Realized Using Silicon-Migration Technology
Author
Fan Zeng ; Man Wong
Author_Institution
Dept. of Electron. & Comput. Eng., Hong Kong Univ. of Sci. & Technol., Hong Kong, China
Volume
24
Issue
3
fYear
2015
fDate
Jun-15
Firstpage
677
Lastpage
684
Abstract
A process based on the silicon-migration technology for the monolithic integration of micromechanical devices and complementary metal-oxide-semiconductor (CMOS) circuits is described. A cavity sealed with a silicon cover-diaphragm is first formed without the need of a sacrificial layer etch. The transistors are next fabricated. The issues of material and process incompatibility inherently present in many schemes of microsystem integration are largely avoided using this technique. The technology was demonstrated with the design, fabrication, and characterization of a 16 × 16 active-matrix tactile sensor integrated with a 16-stage CMOS ring counter for row scanning.
Keywords
CMOS integrated circuits; MOSFET; counting circuits; diaphragms; elemental semiconductors; integrated circuit design; microfabrication; microsensors; seals (stoppers); silicon; tactile sensors; 16-stage CMOS ring counter; CMOS circuit; Si; cavity sealing; complementary metal-oxide-semiconductor circuit; micromechanical devices; microsystem integration; monolithic integration; sacrificial layer etching; self-scanned active-matrix tactile sensor; silicon cover-diaphragm; silicon-migration technology; transistor; Arrays; CMOS integrated circuits; Cavity resonators; Logic gates; Radiation detectors; Silicon; Transistors; MEMS-CMOS integration; Silicon-migration technology (SiMiT); tactile sensor;
fLanguage
English
Journal_Title
Microelectromechanical Systems, Journal of
Publisher
ieee
ISSN
1057-7157
Type
jour
DOI
10.1109/JMEMS.2014.2344025
Filename
6877613
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