Title :
On the effect of scattering in Schottky Barrier MOSFETs
Author :
Zeng, Lang ; Liu, Xiao Yan ; Du, Gang ; Kang, Jin Feng ; Han, Ru Qi
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits, Peking Univ., Peking
Abstract :
In this paper, we performed a simulation on a 45-nm UTB SOI Schottky Barrier MOSFETs using our two dimensional Ensemble full band Monte Carlo simulator to evaluate the effect of scattering in Schottky Barrier MOSFETs (SB FETs). The carrier transport details for both ballistic case and scattering case are simulated and analyzed. The scattering plays a less important role on the performance in SB FETs than in conventional highly doped S/D MOSFETs. Based on our analysis, the inappropriate of Natoripsilas ballistic transport model applied to SB FETs is revealed and the reason is due to the existence of non-local tunneling. Further development of the quasi ballistic model is necessary to include this non-local effect.
Keywords :
MOSFET; Monte Carlo methods; Schottky barriers; ballistic transport; Natori ballistic transport model; UTB SOI Schottky barrier MOSFETs; carrier transport; nonlocal tunneling; scattering effect; size 45 nm; two-dimensional ensemble full band Monte Carlo simulator; Acoustic scattering; Ballistic transport; Electromagnetic compatibility; FETs; MOSFETs; Microelectronics; Monte Carlo methods; Optical scattering; Performance evaluation; Schottky barriers; Schottky barrier MOSFETs; ballistic transport; scattering;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4244-2539-6
Electronic_ISBN :
978-1-4244-2540-2
DOI :
10.1109/EDSSC.2008.4760703
