DocumentCode
2467789
Title
III-nitride heterojunction FETs : Future perspectives
Author
Kuzuhara, Masaaki
Author_Institution
Grad. Sch. of Eng., Univ. of Fukui, Fukui
fYear
2008
fDate
8-10 Dec. 2008
Firstpage
1
Lastpage
4
Abstract
III-nitride electron devices are attracting considerable attention for future wireless communication equipments and power electronics systems. This paper gives an overview on the state-of-the-art performance of AlGaN/GaN heterojunction FETs and describes some key issues concerning further improvements in the device performance. Focus is also on the future perspectives of III-nitride-based transistor applications.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; semiconductor device breakdown; AlGaN-GaN; electron devices; heterojunction FET; Aluminum gallium nitride; FETs; Gallium arsenide; Gallium nitride; HEMTs; Heterojunctions; Power engineering and energy; Power generation; Semiconductor device breakdown; Semiconductor devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices and Solid-State Circuits, 2008. EDSSC 2008. IEEE International Conference on
Conference_Location
Hong Kong
Print_ISBN
978-1-4244-2539-6
Electronic_ISBN
978-1-4244-2540-2
Type
conf
DOI
10.1109/EDSSC.2008.4760744
Filename
4760744
Link To Document