Title :
Dielectric properties of plasma polymerized thin films of tetramethylsilane and ammonia
Author :
Sadhir, R.K. ; Saunders, E.E. ; Bennett, A.I.
Author_Institution :
Westinghouse Res. & Dev. Center, Pittsburgh, PA, USA
Abstract :
Films produced by plasma deposition of a mixture of tetramethylsilane (TMS) and ammonia (NH/sub 3/) at different substrate temperatures were studied. The intent was to produce films comprising organo-silicon polymers with inorganic-type silicon nitride. Measurements of the rate of deposition, composition, structure and electrical properties (over a wide range of frequency) of films deposited at various temperatures are reported and discussed. Parameters such as flow rates, RF power, and position of the substrate were held constant. An attempt is made to correlate the electrical properties with the composition.<>
Keywords :
ammonia; dielectric losses; dielectric thin films; electric breakdown of solids; electric strength; organic compounds; plasma deposited coatings; spectrochemical analysis; NH/sub 3/; RF power; composition; deposition rate; dielectric films; electrical properties; flow rates; organo-silicon polymers; plasma deposition; plasma polymerized thin films; structure; substrate temperatures; tetramethylsilane; Dielectric measurements; Dielectric substrates; Dielectric thin films; Frequency measurement; Plasma measurements; Plasma properties; Plasma temperature; Polymer films; Semiconductor films; Silicon;
Conference_Titel :
Electrical Insulation, 1988., Conference Record of the 1988 IEEE International Symposium on
Conference_Location :
Cambridge, MA, USA
DOI :
10.1109/ELINSL.1988.13889
