DocumentCode :
2470463
Title :
1 μm-scale oxide/semiconductor photonic lattice fabrication by wet oxidation methods
Author :
Smith, C.J.M. ; Hobbs, L. ; Krauss, T.F. ; De La Rue, R.M. ; Dawson, M.D.
Author_Institution :
Dept. of Electron. & Electr. Eng., Glasgow Univ., UK
Volume :
2
fYear :
1998
fDate :
3-4 Dec 1998
Firstpage :
32
Abstract :
We have shown that “all-solid” 1D and 2D oxide/semiconductor grating microstructures, with feature size of 1 μm and 1:1 height:width aspect ratio, may be formed in a controlled manner by top-down pattern-masked wet-thermal oxidation of compositionally-graded AlGaAs layers. This approach is expected to have considerable impact in the fabrication of practical photonic lattice light-emitting devices
Keywords :
III-V semiconductors; aluminium compounds; diffraction gratings; gallium arsenide; light emitting devices; masks; optical fabrication; oxidation; photonic band gap; 1 mum; AlGaAs; compositionally-graded AlGaAs layers; feature size; height:width aspect ratio; oxide/semiconductor grating microstructures; oxide/semiconductor photonic lattice fabrication; practical photonic lattice light-emitting device fabrication; top-down pattern-masked wet-thermal oxidation; wet oxidation methods; Diode lasers; Etching; Fabrication; Gratings; Lattices; Microstructure; Optical control; Oxidation; Semiconductor laser arrays; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-4947-4
Type :
conf
DOI :
10.1109/LEOS.1998.739446
Filename :
739446
Link To Document :
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