DocumentCode
247131
Title
Metasurface with reconfigurable reflection phase for high-power microwave applications
Author
Morgan, Kelsey ; Scarborough, Clinton ; Gregory, Mark ; Werner, David ; Werner, Philipp ; Griffiths, Scott F.
Author_Institution
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear
2014
fDate
6-11 July 2014
Firstpage
1230
Lastpage
1231
Abstract
We propose a metasurface with reconfigurable reflection phase that can operate in high power microwave (HPM) applications. The structure relies on capacitor networks controlled by appropriately biased PIN diodes. Simulations reveal that the metasurface has a reflection phase tuning range of approximately 300 degrees with an associated change in capacitance of 2.7 pF.
Keywords
microwave diodes; p-i-n diodes; HPM applications; biased PIN diodes; capacitance 2.7 pF; capacitor networks; high-power microwave applications; metasurface; reconfigurable reflection phase; Capacitance; Capacitors; Metamaterials; PIN photodiodes; Reflection; Surface impedance; Tuning;
fLanguage
English
Publisher
ieee
Conference_Titel
Antennas and Propagation Society International Symposium (APSURSI), 2014 IEEE
Conference_Location
Memphis, TN
ISSN
1522-3965
Print_ISBN
978-1-4799-3538-3
Type
conf
DOI
10.1109/APS.2014.6904942
Filename
6904942
Link To Document