Title :
Thermal analysis on AlGaInP thin-film LED with ITO p-type contact by electrical method
Author :
Zhou, Zhou ; Feng, Shiwei ; Zhang, Guangchen ; Li, Chuanchuan ; Su, Zhiping
Author_Institution :
Sch. of Electron. Inf. & Control Eng., Beijing Univ. of Technol., Beijing, China
Abstract :
Thermal characteristics of AlGaInP thin-film LED with transparent conducting ITO p-type contact by electrical method are presented and discussed . Samples without ITO fabricated from the same AlGaInP /GaAs epitaxial material are also prepared as references . The temperature coefficients of the samples are measured firstly and they are used as temperature sensitive parameters to determine the temperature rise . Heating response curves show that the temperature of chip in the sample with ITO is about 9K lower than the sample without ITO when the time of applying 60mA operation current exceeds 105 μs. It can be also calculated that thermal resistance(from chip to ambient condition) of the sample with ITO is about 40K/W lower than the one without ITO. Finally we make the conclusion that the ITO layer is helpful for the thermal management of LED and it can improve the reliability the AlGaInP thin-film LED effectively.
Keywords :
III-V semiconductors; aluminium compounds; electrical contacts; gallium arsenide; gallium compounds; indium compounds; light emitting diodes; semiconductor device reliability; thermal management (packaging); AlGaInP-GaAs; AlGaInP/GaAs epitaxial material; ITO; electrical method; heating response curves; reliability; temperature coefficients; temperature sensitive parameters; thermal analysis; thermal management; thin-film LED; transparent conducting ITO p-type contact; Heating; Indium tin oxide; Light emitting diodes; Materials; Reliability; Semiconductor device measurement; Temperature measurement; AlGaInP; ITO; electrical method; thermal analysis; thin-film LED;
Conference_Titel :
Remote Sensing, Environment and Transportation Engineering (RSETE), 2011 International Conference on
Conference_Location :
Nanjing
Print_ISBN :
978-1-4244-9172-8
DOI :
10.1109/RSETE.2011.5965860
