DocumentCode :
2471895
Title :
6F-1 Trench-Isolated CMUT Arrays with a Supporting Frame: Characterization and Imaging Results
Author :
Zhuang, Xuefeng ; Wygant, Ira O. ; Lin, Der-Song ; Kupnik, Mario ; Oralkan, Ömer ; Khuri-Yakub, Butrus T.
Author_Institution :
Stanford Univ., Stanford
fYear :
2007
fDate :
28-31 Oct. 2007
Firstpage :
507
Lastpage :
510
Abstract :
We report on the characterization and imaging results of trench-isolated CMUT arrays with a supporting frame. The CMUT arrays are built on a silicon-on-insulator (SOI) wafer using direct wafer-to-wafer fusion bonding technique. Electrical contacts to individual elements are brought to the back side of the wafer by highly conductive silicon pillars. Mechanical support for array elements is provided by a silicon frame structure. 1D and 2D arrays with 250-mum element pitch were fabricated and tested in air and in immersion. Rectangular membranes are used, which feature two distinctive pull-in (collapse) points in both air and immersion tests. The double collapsing membranes enable an operating frequency ranging from 1.9 MHz in conventional mode to 58 MHz in second collapse mode on the same device. After flip-chip bonding the 2D arrays to custom-designed integrated circuits (IC), volumetric imaging was demonstrated.
Keywords :
capacitors; flip-chip devices; micromechanical devices; silicon-on-insulator; ultrasonic imaging; ultrasonic transducer arrays; wafer bonding; 1D CMUT array; 2D CMUT array; SOI wafer; array element mechanical support; capacitive micromachined ultrasonic transducer; direct wafer-wafer fusion bonding technique; double collapsing membrane; flip chip bonding; frequency 1.9 MHz to 58 MHz; rectangular membrane; second collapse mode; silicon on insulator wafer; size 250 mum; trench isolated CMUT array; volumetric imaging; Biomembranes; Circuit testing; Contacts; Electrodes; Fabrication; Frequency; Integrated circuit interconnections; Laboratories; Silicon; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium, 2007. IEEE
Conference_Location :
New York, NY
ISSN :
1051-0117
Print_ISBN :
978-1-4244-1384-3
Electronic_ISBN :
1051-0117
Type :
conf
DOI :
10.1109/ULTSYM.2007.134
Filename :
4409707
Link To Document :
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