Title :
ArF lithography for the 130 and 100 nm technology nodes
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
The status of 193 nm lithography for the 130 and 100 nm nodes is outlined. For the first node, the experimental results are compared to 248 nm. Data are shown illustrating the performance of 193 nm lithography for the 100 nm technology node and predictions of further required improvements are made.
Keywords :
photolithography; 100 nm technology node; 130 nm technology node; 193 nm; ArF lithography; resists; Adhesives; Dry etching; Economic forecasting; Focusing; Lenses; Lithography; Production systems; Research and development; Resists; Throughput;
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
DOI :
10.1109/IMNC.2000.872597
