Three band-gap QW intermixing in InP/InGaAs/InGaAsP system for monolithically integrated optical switch

Author

Qian, Y.H. ; Owen, M. ; Ke, M.L. ; Qiu, B.C. ; McDougall, S.D. ; Kowalski, P. ; Hamilton, C.J. ; Bryce, A.C. ; Marsh, J.H. ; Wilkinson, C.D.W. ; Penty, R.V. ; White, I.H. ; Perrin, Stephane ; Rogers, D. ; Robertson, M.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

Volume

2

fYear

1998

fDate

3-4 Dec 1998

Firstpage

194

Abstract

We have demonstrated that independent control of three band-gaps across an InP-InGaAs-InGaAsP QW wafer can be achieved by a two-stage sputtered silica intermixing processes. This will be used for optimisation of the performance of optical switches which consist of passive components, modulators and amplifiers

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical switches; semiconductor quantum wells; InP-InGaAs-InGaAsP; InP-InGaAs-InGaAsP QW wafer; amplifiers; independent control; modulators; monolithically integrated optical switch; optical switches; optimisation; passive components; three band-gap QW intermixing; two-stage sputtered silica intermixing processes; Annealing; Differential amplifiers; Indium gallium arsenide; Indium phosphide; Optical amplifiers; Optical modulation; Optical surface waves; Photonic band gap; Resists; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1998. LEOS '98. IEEE

Conference_Location

Orlando, FL

Print_ISBN

0-7803-4947-4

Type

conf

DOI

10.1109/LEOS.1998.739527

Filename

739527