Comparative Studies on the Characteristics of ZnO Thin Films Deposited by Single-Step and Two-Step Method Using RF Sputtering

Author

Giri, P. ; Narayan, C. ; Vyas, S. ; Chakrabarti, P.

Author_Institution

Dept. of Electron. & Commun. Eng., Motilal Nehru Nat. Inst. of Technol., Allahabad, India

fYear

2014

fDate

12-13 Sept. 2014

Firstpage

1

Lastpage

3

Abstract

ZnO thin films are deposited by single step and a two-step method on Si (100) substrates by using RF sputtering. The comparisons are based on structural, surface morphology and topography of ZnO thin films. XRD pattern of the ZnO film derived by two-step method exhibited single crystalline wurtzite structure. AFM results revealed the crystallite size and roughness of the ZnO thin film.

Keywords

II-VI semiconductors; X-ray diffraction; atomic force microscopy; semiconductor growth; semiconductor thin films; sputter deposition; surface morphology; surface roughness; surface topography; wide band gap semiconductors; zinc compounds; AFM; RF Sputtering; Si; Si(100) substrate; XRD; ZnO; crystallite size; single crystalline wurtzite structure; single-step method; surface morphology; surface roughness; surface topography; thin films; two-step method; Films; Radio frequency; Silicon; Sputtering; Substrates; X-ray scattering; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Devices, Circuits and Communications (ICDCCom), 2014 International Conference on

Conference_Location

Ranchi

Type

conf

DOI

10.1109/ICDCCom.2014.7024706

Filename

7024706