DocumentCode :
247243
Title :
Comparative Studies on the Characteristics of ZnO Thin Films Deposited by Single-Step and Two-Step Method Using RF Sputtering
Author :
Giri, P. ; Narayan, C. ; Vyas, S. ; Chakrabarti, P.
Author_Institution :
Dept. of Electron. & Commun. Eng., Motilal Nehru Nat. Inst. of Technol., Allahabad, India
fYear :
2014
fDate :
12-13 Sept. 2014
Firstpage :
1
Lastpage :
3
Abstract :
ZnO thin films are deposited by single step and a two-step method on Si (100) substrates by using RF sputtering. The comparisons are based on structural, surface morphology and topography of ZnO thin films. XRD pattern of the ZnO film derived by two-step method exhibited single crystalline wurtzite structure. AFM results revealed the crystallite size and roughness of the ZnO thin film.
Keywords :
II-VI semiconductors; X-ray diffraction; atomic force microscopy; semiconductor growth; semiconductor thin films; sputter deposition; surface morphology; surface roughness; surface topography; wide band gap semiconductors; zinc compounds; AFM; RF Sputtering; Si; Si(100) substrate; XRD; ZnO; crystallite size; single crystalline wurtzite structure; single-step method; surface morphology; surface roughness; surface topography; thin films; two-step method; Films; Radio frequency; Silicon; Sputtering; Substrates; X-ray scattering; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Devices, Circuits and Communications (ICDCCom), 2014 International Conference on
Conference_Location :
Ranchi
Type :
conf
DOI :
10.1109/ICDCCom.2014.7024706
Filename :
7024706
Link To Document :
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