Title :
Optical gain and transient nonlinearities in Ge quantum wells
Author :
Chatterjee, S. ; Lange, C. ; Köster, N.S. ; Sigg, H. ; Chrastina, D. ; Isella, G. ; Von Känel, H. ; Schäfer, M. ; Kira, M. ; Koch, S.W.
Author_Institution :
Fac. of Phys. & Mater. Sci. Center, Philipps-Univ., Marburg, Germany
Abstract :
Ultrafast carrier dynamics of Ge/SiGe quantum wells grown on a Si substrate are investigated using pump-probe spectroscopy. Optical gain and population inversion are obtained on a femtosecond time scale. A microscopic theory supports the results.
Keywords :
carrier mobility; elemental semiconductors; germanium; high-speed optical techniques; nonlinear optics; population inversion; semiconductor quantum wells; time resolved spectra; Ge; Si; Si substrate; femtosecond time scale; germanium quantum wells; microscopic theory; optical gain; population inversion; pump-probe spectroscopy; transient nonlinearities; ultrafast carrier dynamics; Light scattering; Nonlinear optics; Optical buffering; Optical modulation; Optical pumping; Optical scattering; Particle scattering; Pulse amplifiers; Stimulated emission; Ultrafast optics;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338362
