DocumentCode :
2473153
Title :
Contrast evaluation of SCALPEL GHOST method in 100 kV electron projection lithography
Author :
Koba, F. ; Yamashita, H. ; Nomura, E. ; Nakajima, K. ; Nozue, H.
Author_Institution :
ULSI Device Dev. Lab., NEC Corp., Sagamihara, Japan
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
122
Lastpage :
123
Abstract :
Electron projection lithography (EPL) techniques, such as SCALPEL and PREVAIL, are expected to be candidates for fabricating 80-nm devices or less. In electron-beam lithography, the proximity effect correction (PEC) is the most critical issue for obtaining sufficient dimension accuracy and good resist pattern profiles. The SCALPEL GHOST method, proposed by Watson et al. (1995), has a remarkable advantage to throughput by doing both the pattern and correction exposures, simultaneously. This method, however, degrades the exposure intensity contrast due to a larger background dose than that in other PEC methods, such as pattern modification. In this paper, we investigate the essential conditions for the SCALPEL GHOST PEC to achieve 80-nm resolution in 100 kV EFL in terms of the exposure intensity contrast.
Keywords :
electron beam lithography; proximity effect (lithography); 100 kV; 80 nm; SCALPEL GHOST method; dimension accuracy; electron projection lithography; exposure intensity contrast; proximity effect correction; resist pattern profiles; Backscatter; Chemicals; Electrons; Laboratories; Lithography; National electric code; Page description languages; Proximity effect; Resists; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872653
Filename :
872653
Link To Document :
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