Title :
Gain measurements of quantum well intermixed hybrid silicon evanescent lasers
Author :
Koch, B.R. ; Sysak, M.N. ; Jones, R.
Author_Institution :
Intel Corp., Santa Clara, CA, USA
Abstract :
Using a single active material, we demonstrate hybrid silicon lasers having 4 different wavelengths spanning >100 nm. Measurements show that performance is similar for lasers operating at 1450, 1475, 1510, and 1560 nm.
Keywords :
elemental semiconductors; integrated optics; semiconductor laser arrays; semiconductor quantum wells; silicon; Si; bandgaps; four channel array; gain measurements; hybrid silicon Fabry-Perot lasers; hybrid silicon evanescent lasers; optical bandwidth; quantum well intermixing; single active material; wavelength 1450 nm; wavelength 1475 nm; wavelength 1510 nm; wavelength 1560 nm; Bandwidth; Distributed feedback devices; Gain measurement; III-V semiconductor materials; Laser feedback; Quantum well lasers; Ring lasers; Silicon on insulator technology; Wafer bonding; Waveguide lasers;
Conference_Titel :
Group IV Photonics, 2009. GFP '09. 6th IEEE International Conference on
Conference_Location :
San Francisco, CA
Print_ISBN :
978-1-4244-4402-1
Electronic_ISBN :
1949-2081
DOI :
10.1109/GROUP4.2009.5338388
