DocumentCode :
2473236
Title :
Simulation of electron and ion beam optics for high throughput lithography
Author :
Zhu, X. ; Liu, H. ; Munro, E. ; Rouse, J.
Author_Institution :
Munros Electron Beam Software Ltd., London, UK
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
134
Lastpage :
135
Abstract :
Several electron and ion beam systems are currently being developed as possible candidates for high-throughput next generation lithography ("NGL"). These include projection electron beam columns such as PREVAIL and SCALPEL ion beam projection systems, multi-beam and multi-column systems. The design and optimization of such systems requires a sophisticated and accurate simulation of the optical performance, including an analysis of the aberrations, Coulomb interaction effects and tolerancing requirements. We have developed a comprehensive range of software tools to assist in this design process.
Keywords :
aberrations; electron beam lithography; electron optics; ion beam lithography; ion optics; semiconductor process modelling; Coulomb interactions; PREVAIL; SCALPEL; aberrations; computer simulation; design optimization; electron beam optics; high-throughput next generation lithography; ion beam optics; multi-beam system; multi-column system; projection system; software package; tolerancing; Analytical models; Design optimization; Electron beams; Electron optics; Ion beams; Lithography; Optical beams; Optical design; Particle beam optics; Throughput;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872658
Filename :
872658
Link To Document :
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