DocumentCode :
2473773
Title :
10 nm size fabrication of semiconductor substrates and metal thin lines by conventional photolithography
Author :
Hashioka, S. ; Matsumura, H.
Author_Institution :
Sch. of Mater. Sci., Japan Adv. Inst. of Sci. & Technol., Ishikawa, Japan
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
184
Lastpage :
185
Abstract :
The novel nano-technology is required for realizing the nano-scale devices such as single electron transistor (SET) and metal/insulator tunnel transistor (MITT). Recently, new methods to fabricate a nanometer region of metals by using such as a tip of a scanning tunneling microscope (STM) have been reported. However, these do not appear as industrially acceptable techniques. Then, a new nano-technology utilizing conventional photolithography was proposed. A contact pattern-mask with nanometer-size slits was fabricated by combination of conventional photo-lithography and anodic oxidation of side-wall of metal. In this study the application of the pattern-mask is shown. Nanometer-size fabrication of semiconductor substrates and metal thin lines by using the pattern-mask is attempted.
Keywords :
anodisation; masks; nanotechnology; photolithography; 10 nm; anodic oxidation; fabrication; metal thin line; metal/insulator tunnel transistor; nanotechnology; pattern mask; photolithography; semiconductor substrate; single electron transistor; Fabrication; Insulation; Lithography; Metal-insulator structures; Microscopy; Nanoscale devices; Oxidation; Single electron transistors; Substrates; Tunneling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872695
Filename :
872695
Link To Document :
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