DocumentCode :
2473919
Title :
Advanced 0.13um smart power technology from 7V to 70V
Author :
Chang, Hoon ; Jang, Jae-June ; Kim, Min-Hwan ; Lee, Eung-Kyu ; Jang, Dong-Eun ; Park, Jun-Sung ; Jung, Jae-Hyeon ; Yoon, Chang-Joon ; Bae, Sung-Ryoul ; Park, Chan-Ho
Author_Institution :
S.LSI Div., Samsung Electron., Yongin, South Korea
fYear :
2012
fDate :
3-7 June 2012
Firstpage :
217
Lastpage :
220
Abstract :
This paper presents BCD process integrating 7V to 70V power devices on 0.13um CMOS platform for various power management applications. BJT, Zener diode and Schottky diode are available and non-volatile memory is embedded as well. LDMOS shows best-in-class specific Ron (RSP) vs. BVDSS characteristics (i.e., 70V NMOS has RSP of 69mΩ-mm2 with BVDSS of 89V). Modular process scheme is used for flexibility to various requirements of applications.
Keywords :
BIMOS integrated circuits; CMOS integrated circuits; Schottky diodes; Zener diodes; bipolar transistors; power integrated circuits; random-access storage; BCD process; BJT; CMOS platform; LDMOS; Schottky diode; Zener diode; nonvolatile memory; power management applications; size 0.13 mum; smart power technology; voltage 7 V to 70 V; CMOS integrated circuits; CMOS technology; Doping; MOS devices; Metals; Schottky diodes;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
ISSN :
1943-653X
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
Type :
conf
DOI :
10.1109/ISPSD.2012.6229062
Filename :
6229062
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=2473919
بازگشت