Title :
A physics based compact model for drain current in AlGaN/GaN HEMT devices
Author :
Khandelwal, Sourabh ; Fjeldly, Tor A.
Author_Institution :
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
In this paper we present a physics based analytical model for the drain current Id in AlGaN/GaN high electron mobility transistors. The proposed model is developed based on the analytical 2-D electron gas density ns model developed previously by our group. The model includes important effects like velocity saturation, channel length modulation, short channel effect, pinch-off, mobility degradation, and self-heating. The model is in excellent agreement with the experimental data over a typical range of applied gate and drain voltages for various device geometries.
Keywords :
III-V semiconductors; high electron mobility transistors; modulation; wide band gap semiconductors; AlGaN-GaN; HEMT device; analytical 2D electron gas; channel length modulation; device geometry; drain current; high electron mobility transistor; mobility degradation; physics based analytical model; physics based compact model; pinch-off; self-heating; short channel effect; velocity saturation; Aluminum gallium nitride; Analytical models; Data models; Gallium nitride; HEMTs; MODFETs; Mathematical model; AlGaN/GaN HEMT; compact models; modulation doped field effect transistors (MODFETs);
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229068