Title :
GaN-based bidirectional Super HFETs Using polarization junction concept on insulator substrate
Author :
Nakajima, Akira ; Sumida, Yasunobu ; Kawai, Hiroji ; Unni, Vineet ; Menon, Kalyani G. ; Dhyani, Mahesh H. ; Narayanan, E. M Sankara
Author_Institution :
Energy Technol. Res. Inst., AIST, Tsukuba, Japan
Abstract :
GaN based bidirectional Super Heterojunction Field Effect Transistors (BiSHFETs) using the polarization junction (PJ) concept are demonstrated for the first time. The fabricated BiSHFETs are arrayed on an insulator substrate of Sapphire and measured isolation voltage between the devices is more than 2 kV. Measured on-resistances of the fabricated BiSHFETs with MES and PN gate structures are 24 Ωmm and 22 Ωmm in the both directions respectively.
Keywords :
III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; BiSHFET; GaN; MES structure; PN gate structure; bidirectional super HFET; insulator substrate; isolation voltage; polarization junction concept; sapphire; super heterojunction field effect transistor; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Substrates; Two dimensional hole gas; GaN; bidirectional switch; polarization junction;
Conference_Titel :
Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on
Conference_Location :
Bruges
Print_ISBN :
978-1-4577-1594-5
Electronic_ISBN :
1943-653X
DOI :
10.1109/ISPSD.2012.6229074
