GaN-based bidirectional Super HFETs Using polarization junction concept on insulator substrate

Author

Nakajima, Akira ; Sumida, Yasunobu ; Kawai, Hiroji ; Unni, Vineet ; Menon, Kalyani G. ; Dhyani, Mahesh H. ; Narayanan, E. M Sankara

Author_Institution

Energy Technol. Res. Inst., AIST, Tsukuba, Japan

fYear

2012

fDate

3-7 June 2012

Firstpage

265

Lastpage

268

Abstract

GaN based bidirectional Super Heterojunction Field Effect Transistors (BiSHFETs) using the polarization junction (PJ) concept are demonstrated for the first time. The fabricated BiSHFETs are arrayed on an insulator substrate of Sapphire and measured isolation voltage between the devices is more than 2 kV. Measured on-resistances of the fabricated BiSHFETs with MES and PN gate structures are 24 Ωmm and 22 Ωmm in the both directions respectively.

Keywords

III-V semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; wide band gap semiconductors; BiSHFET; GaN; MES structure; PN gate structure; bidirectional super HFET; insulator substrate; isolation voltage; polarization junction concept; sapphire; super heterojunction field effect transistor; Aluminum gallium nitride; Gallium nitride; HEMTs; Logic gates; MODFETs; Substrates; Two dimensional hole gas; GaN; bidirectional switch; polarization junction;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2012 24th International Symposium on

Conference_Location

Bruges

ISSN

1943-653X

Print_ISBN

978-1-4577-1594-5

Electronic_ISBN

1943-653X

Type

conf

DOI

10.1109/ISPSD.2012.6229074

Filename

6229074