• DocumentCode
    2474522
  • Title

    Dynamic three-dimensional mask-wafer positioning with nanometer exposure overlay accuracy

  • Author

    Moon, E.E. ; Everett, P.N. ; Meinhold, M.W. ; Smith, H.I.

  • Author_Institution
    Res. Lab. of Electron., MIT, Cambridge, MA, USA
  • fYear
    2000
  • fDate
    11-13 July 2000
  • Firstpage
    252
  • Lastpage
    253
  • Abstract
    In previous articles we described an x-ray mask alignment scheme called Interferometric Broad-Band Imaging (IBBI), and an interferometric gapping scheme called Transverse Chirp Gapping (TCG). Both schemes encode position in the spatial phase relation of two sets of interference fringes, observed with an oblique-incidence optical microscope. IBBI is capable of detecting sub-nanometer misalignment, and TCG has shown a phase detectivity in the nanometer regime. Here we demonstrate the efficacy of IBBI and TCG for performing dynamically aligned and gapped exposures using a relatively inexpensive (-$150k), custom-built stepper. Additionally, we describe a scheme to minimize overlay runout by direct alignment of an x-ray point source to an arbitrary fiducial mark on the mask.
  • Keywords
    X-ray masks; nanotechnology; X-ray mask alignment; X-ray point source; X-ray stepper; dynamic three-dimensional mask-wafer positioning; interferometric broad-band imaging; nanometer exposure overlay accuracy; optical microscope; transverse chirp gapping; Charge coupled devices; Laboratories; Moon; Optical devices; Optical feedback; Optical interferometry; Optical microscopy; Phase detection; Resists; X-ray imaging;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology Conference, 2000 International
  • Conference_Location
    Tokyo, Japan
  • Print_ISBN
    4-89114-004-6
  • Type

    conf

  • DOI
    10.1109/IMNC.2000.872741
  • Filename
    872741