DocumentCode :
2474522
Title :
Dynamic three-dimensional mask-wafer positioning with nanometer exposure overlay accuracy
Author :
Moon, E.E. ; Everett, P.N. ; Meinhold, M.W. ; Smith, H.I.
Author_Institution :
Res. Lab. of Electron., MIT, Cambridge, MA, USA
fYear :
2000
fDate :
11-13 July 2000
Firstpage :
252
Lastpage :
253
Abstract :
In previous articles we described an x-ray mask alignment scheme called Interferometric Broad-Band Imaging (IBBI), and an interferometric gapping scheme called Transverse Chirp Gapping (TCG). Both schemes encode position in the spatial phase relation of two sets of interference fringes, observed with an oblique-incidence optical microscope. IBBI is capable of detecting sub-nanometer misalignment, and TCG has shown a phase detectivity in the nanometer regime. Here we demonstrate the efficacy of IBBI and TCG for performing dynamically aligned and gapped exposures using a relatively inexpensive (-$150k), custom-built stepper. Additionally, we describe a scheme to minimize overlay runout by direct alignment of an x-ray point source to an arbitrary fiducial mark on the mask.
Keywords :
X-ray masks; nanotechnology; X-ray mask alignment; X-ray point source; X-ray stepper; dynamic three-dimensional mask-wafer positioning; interferometric broad-band imaging; nanometer exposure overlay accuracy; optical microscope; transverse chirp gapping; Charge coupled devices; Laboratories; Moon; Optical devices; Optical feedback; Optical interferometry; Optical microscopy; Phase detection; Resists; X-ray imaging;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location :
Tokyo, Japan
Print_ISBN :
4-89114-004-6
Type :
conf
DOI :
10.1109/IMNC.2000.872741
Filename :
872741
Link To Document :
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