DocumentCode
2474522
Title
Dynamic three-dimensional mask-wafer positioning with nanometer exposure overlay accuracy
Author
Moon, E.E. ; Everett, P.N. ; Meinhold, M.W. ; Smith, H.I.
Author_Institution
Res. Lab. of Electron., MIT, Cambridge, MA, USA
fYear
2000
fDate
11-13 July 2000
Firstpage
252
Lastpage
253
Abstract
In previous articles we described an x-ray mask alignment scheme called Interferometric Broad-Band Imaging (IBBI), and an interferometric gapping scheme called Transverse Chirp Gapping (TCG). Both schemes encode position in the spatial phase relation of two sets of interference fringes, observed with an oblique-incidence optical microscope. IBBI is capable of detecting sub-nanometer misalignment, and TCG has shown a phase detectivity in the nanometer regime. Here we demonstrate the efficacy of IBBI and TCG for performing dynamically aligned and gapped exposures using a relatively inexpensive (-$150k), custom-built stepper. Additionally, we describe a scheme to minimize overlay runout by direct alignment of an x-ray point source to an arbitrary fiducial mark on the mask.
Keywords
X-ray masks; nanotechnology; X-ray mask alignment; X-ray point source; X-ray stepper; dynamic three-dimensional mask-wafer positioning; interferometric broad-band imaging; nanometer exposure overlay accuracy; optical microscope; transverse chirp gapping; Charge coupled devices; Laboratories; Moon; Optical devices; Optical feedback; Optical interferometry; Optical microscopy; Phase detection; Resists; X-ray imaging;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology Conference, 2000 International
Conference_Location
Tokyo, Japan
Print_ISBN
4-89114-004-6
Type
conf
DOI
10.1109/IMNC.2000.872741
Filename
872741
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